Indium(III) phosphide

Indium phosphide is a binary semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.

InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.

Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.

Optical properties
The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by $$ n^2(\lambda) = 7.255 + \frac{2.316 \lambda^2 }{ \lambda^2 - 0.6263^2} + \frac{2.765 \lambda^2 }{ \lambda^2 - 32.935^2}, $$ where λ is the wavelength in micrometres.



This gives refractive index values rising from around 3.21 at 10 µm and 3.32 at 1.5 µm to 3.47 at 1.0 µm.

Suppliers

 * MSDS at Wafertech
 * MSDS ar espimetals (pdf)
 * Arnaud electronics single crystal wafers
 * Wafer technology polycrystalline
 * Vitesse DARPA funded 150GHz circuits

Indiumphosphid Phosphure d'indium Fosforek indu