Plasma Enhanced Chemical Vapour Deposition

Plasma Enhanced Chemical Vapour Deposition, PECVD or sometimes PCVD, is the process by which chemicals are deposited onto a substrate using a Radio Frequency (RF) Plasma to split the precursors into active ions.

Theory
Precursor chemical enter the chamber (which is generally in high vacuum) at a specified rate, high frequency RF is switched on and a plasma is ignited. Sometimes there is substrate heating to promote reactions.

Input Parameters
Pressure

Temperature

Radio Frequency (High and Low) power ratio

Gas flow ratio

Deposition time

Industry Uses
Semiconductors

Optoelectronics

Anti-reflexion coatings

Scratch-free surfaces

Dielectric deposition Oxi-Nitride.

Metal Deposition - Tungsten

Ex:

Silicon Dioxide, Silicon Nitride, Silicon

Tin oxide, Indium tin oxide

Copper oxide

Plasma Enhanced Chemical Vapour Deposition