Gallium arsenide phosphide

Gallium arsenide phosphide () is a semiconductor material, an alloy of gallium arsenide and gallium phosphide.

Gallium arsenide phosphide is used for manufacturing red, orange and yellow light-emitting diodes. It is often grown on gallium phosphide substrate to form a GaP/GaAsP heterostructure. It can be doped with nitrogen (GaAsP:N).